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| EFA960CR-180F ISSUED 05/11/2006 Low Distortion GaAs Power FET FEATURES * * * * * * Non-Hermetic 180mil Metal Flange Package +36.5 dBm Typical Output Power 16.0 dB Typical Power Gain at 2GHz 0.5 x 9600 Micron Recessed "Mushroom" Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides High Power Efficiency, Linearity and Reliability Caution! ESD sensitive device. MIN 35.0 14.5 TYP 36.5 36.5 16.0 11.0 34 1600 1100 2720 1450 -2.0 -13 -7 -15 -14 6* o ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 2GHz f = 4GHz VDS = 8 V, IDS 50% IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 8 V, IDS 50% IDSS Power Added Efficiency at 1dB Compression f = 2GHz VDS = 8 V, IDS 50% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28 mA IGD = 9.6 mA IGS = 9.6 mA MAX UNITS dBm dB % 3520 mA mS -3.5 V V V C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reversed Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -5V 43.2 mA -7.2 mA 33 dBm 175oC -65/175oC 23 W CONTINUOUS2 8V -3V 14.4 mA -2.4 mA @ 3dB Compression 175oC -65/175oC 23 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised May 2006 EFA960CR-180F ISSUED 05/11/2006 Low Distortion GaAs Power FET S-PARAMETERS VDS = 8 V, IDS 50% IDSS FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.976 0.971 0.948 0.934 0.929 0.908 0.893 0.868 0.847 0.835 0.830 0.823 0.807 0.807 0.824 0.851 0.882 0.901 0.890 0.893 -158.7 -176.4 176.1 168.5 162.1 155.3 146.5 134.3 119.2 101.9 84.3 65.8 46.7 21.5 -7.2 -33.9 -54.9 -74.3 -88.9 -104.2 5.862 3.028 2.702 2.132 1.853 1.736 1.728 1.740 1.751 1.735 1.700 1.661 1.632 1.603 1.473 1.259 1.047 0.876 0.733 0.666 93.1 77.0 69.3 60.0 51.1 41.5 29.7 14.9 -2.0 -20.3 -38.6 -57.7 -77.4 -100.2 -124.5 -147.7 -167.0 174.5 160.0 144.8 0.010 0.012 0.018 0.021 0.025 0.030 0.038 0.047 0.056 0.065 0.074 0.083 0.089 0.096 0.095 0.087 0.078 0.066 0.072 0.068 22.1 22.3 26.4 27.2 26.9 24.1 18.8 7.8 -3.7 -17.5 -31.2 -46.7 -63.4 -81.6 -101.8 -119.4 -136.7 -146.5 -158.3 -177.5 0.822 0.808 0.743 0.733 0.704 0.671 0.626 0.562 0.503 0.453 0.415 0.389 0.391 0.386 0.420 0.481 0.574 0.660 0.659 0.673 179.7 176.5 169.2 167.2 165.4 163.3 158.0 149.5 136.4 119.1 100.0 79.4 59.1 35.4 7.6 -17.7 -36.3 -47.1 -54.7 -64.4 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised May 2006 |
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